Saturday, June 16, 2012

DRAM cell operation

What is DRAM?

   Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory.

Operation :

1. Drive bit line
2. Select row
1. Precharge bit line to Vdd/2
2. Select row
3. Cell and bit line share charges
»Minute voltage changes on the bit line
4. Sense (fancy sense amp)
»Can detect changes of ~1 million electrons
5. Write: restore the value

1. Just do a dummy read to every cell.

Hardwork can never ever fails...
Best Luck...

No comments:

Post a Comment

Thank you for your valuable suggestion. If you feel this post useful, please share our Blog with others!!! Comments just for Backlinking your Website or Blog will be Deleted...