A Photoresistor or Light Dependent Resistor (LDR) is a resistor whose resistance decreases with increasing incident light intensity; in other words, it exhibits photoconductivity.
A Photoresistor is made of a high resistance semiconductor. If light falling on the device is of high enough frequency, photons absorbed by the semiconductor give bound electrons enough energy to jump into the conduction band. The resulting free electron (and its hole partner) conduct electricity, thereby lowering resistance.
A Photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, e.g. silicon. In intrinsic devices the only available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap. Extrinsic devices have impurities, also called dopants,
added whose ground state energy is closer to the conduction band; since
the electrons do not have as far to jump, lower energy photons (i.e.,
longer wavelengths and lower frequencies) are sufficient to trigger the
device. If a sample of silicon has some of its atoms replaced by
phosphorus atoms (impurities), there will be extra electrons available
for conduction. This is an example of an extrinsic semiconductor.
Photoresistors are basically photocells.
Fig 1 Symbol of photo resistor
Fig 2 Photo resistor
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