Gate Turn-off Thyristor (GTO)-Working

GTO:

SCRs and GTOs share the same equivalent schematics (two transistors connected in a positive-feedback fashion), the only differences being details of construction designed to grant the NPN transistor a greater β than the PNP. This allows a smaller gate current (forward or reverse) to exert a greater degree of control over conduction from cathode to anode, with the PNP transistor's latched state being more dependent upon the NPN's than vice versa. The Gate-Turn-Off thyristor is also known by the name of Gate-Controlled Switch, or GCS.

 Types and Structure:

(1) Anode short GTO thyristor:

At the J1 junction, the anode is partially shorted due to the n+ layers, so that the reverse voltage of the GTO thyristor is as small as that of the J3 junction (around 15V normally). However, excess carriers are extracted from the gate and from the n+ layer during the turn-off, enabling high-speed switching. This type of thyristor is suitable for applications that require high-speed switching but do not need high reverse voltage, such as voltage source inverters.

(2) Reverse conducting GTO thyristor:

This product consists of a fast recovery diode part and the anode short GTO thyristor part, the former of which is connected in parallel to the latter.This product is suitable for application to voltage source inverters for example, where a GTO thyristor requires Flywheel diode. No additional diode is necessary if this GTO thyristor is used, reducing the system size and weight.

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